ssb d 2 0100 ct/ ct f ? silikron semiconductor co. , ltd . 20 1 3 . 4 . 2 3 version: 2 . 2 page 1 of 6 www.silikron.com main product characteristics: if 2 10 a vrrm 100v t j (max) 150 vf(max) 0. 8 v features and benefits : ? high junction temperature ? high esd protection ? high forward & reverse surge capability description: schottky barrier rectifier designed for hi gh frequency switch model power supplies such as adaptors and dc/dc convertors; this product special design for high forward and reverse surge capability absolute rating: symbol characterizes value unit v rrm peak repetitive reverse voltage 100 v v r(rms ) rms reverse voltage 70 v i f(av) average forward current per diode 10 a per device 20 a i fsm non r epetitive s urge f orward c urrent(tp=8.3ms sinusoidal) 1 8 0 a i rrm peak repetitive r everse s urge c urrent(tp=2us) 0.5 a t j maximum operation junction temp erature range - 5 5 ~150 t stg storage temperature range - 5 5 ~150 thermal resistance symbol characterizes value unit r jc maximum thermal resistance junction to case (per leg) to220 2 /w r jc to220f 4 /w electrical characterizes @t a =25 unless oth erwise specified symbol characterizes min typ max unit test condition v r reverse breakdown voltage 100 v i r =0. 5 ma v f forward voltage drop 0.8 v i f = 10 a, t j =25 f = 10 a, t j =125 r leakage current 0.1 ma v r =100v, t j =25 r =100v, t j = 125 to220f ssbd 2 0100ct f to220 ssbd 2 0100ct schematic d iagram
ssb d 2 0100 ct/ ct f ? silikron semiconductor co. , ltd . 20 1 3 . 4 . 2 3 version: 2 . 2 page 2 of 6 www.silikron.com i - v curves: figure 1 typical forward c haracteristics figure 2 typical capacitance c haracteristics figure 3 typical reverse c haracteristics figure 4 forward current derating curve
ssb d 2 0100 ct/ ct f ? silikron semiconductor co. , ltd . 20 1 3 . 4 . 2 3 version: 2 . 2 page 3 of 6 www.silikron.com mechanical data min nom max min nom max a - 1.300 - - 0.051 - a1 2.200 2.400 2.600 0.087 0.094 0.102 b - 1.270 - - 0.050 - b1 1.270 1.370 1.470 0.050 0.054 0.058 c - 0.500 - - 0.020 - d - 15.600 - - 0.614 - d1 - 28.700 - - 1.130 - d2 - 9.150 - - 0.360 - e 9.900 10.000 10.100 0.390 0.394 0.398 e1 - 10.160 - - 0.400 - p - 3.600 - - 0.142 - p1 1.500 0.059 e l 12.900 13.100 13.300 0.508 0.516 0.524 ?1 - 7 0 - - 7 0 - ?2 - 7 0 - - 7 0 - ?3 - 3 0 - 5 0 7 0 9 0 ?4 - 3 0 - 1 0 3 0 5 0 symbol dimension in millimeters dimension in inches 2.54bsc 0.1bsc to220 package outline dimension_gn e d d1 p a ? 1 d2 a1 c e b b1 ? 2 ? 3 l ? 4 p1 e1
ssb d 2 0100 ct/ ct f ? silikron semiconductor co. , ltd . 20 1 3 . 4 . 2 3 version: 2 . 2 page 4 of 6 www.silikron.com min nom max min nom max e 9.960 10.160 10.360 0.392 0.400 0.408 e1 9.840 10.040 10.240 0.387 0.395 0.403 e2 6.800 7.000 7.200 0.268 0.276 0.283 a 4.600 4.700 4.800 0.181 0.185 0.189 a1 2.440 2.540 2.640 0.096 0.100 0.104 a2 2.660 2.760 2.860 0.105 0.109 0.113 a3 0.600 0.700 0.800 0.024 0.028 0.031 c - 0.500 - - 0.020 - d 15.780 15.870 15.980 0.621 0.625 0.629 d1 8.970 9.170 9.370 0.353 0.361 0.369 h1 6.500 6.700 6.800 0.256 0.264 0.268 e p 3.080 3.180 3.280 0.121 0.125 0.129 p 1 1.400 1.500 1.600 0.055 0.059 0.063 p 2 0.900 1.000 1.100 0.035 0.039 0.043 p 3 0.100 0.200 0.300 0.004 0.008 0.012 l 12.780 12.980 13.180 0.503 0.511 0.519 l1 2.970 3.170 3.370 0.117 0.125 0.133 l2 0.830 0.930 1.030 0.033 0.037 0.041 q1 3 o 5 o 7 o 3 o 5 o 7 o q2 43 o 45 o 47 o 43 o 45 o 47 o b1 1.180 1.280 1.380 0.046 0.050 0.054 b2 0.760 0.800 0.840 0.030 0.031 0.033 b3 - - 1.420 - - 0.056 symbol dimension in millimeters dimension in inches 2.54bsc 0.10bsc to220f package outline dimension_gn
ssb d 2 0100 ct/ ct f ? silikron semiconductor co. , ltd . 20 1 3 . 4 . 2 3 version: 2 . 2 page 5 of 6 www.silikron.com ordering and marking information device marking: ssbd 20 0100ct& ssbd 2 0100ctf package (available) to - 220&to220f operating temperature range c : - 55 to 150 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/car ton box to220 50 20 1000 6 6000 to220f 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) tj=125 to 1 5 0 @ 80% of max vdss/vces/vr 168 hours 500 hours 1000 hours 3 lots x 77 devices
ssb d 2 0100 ct/ ct f ? silikron semiconductor co. , ltd . 20 1 3 . 4 . 2 3 version: 2 . 2 page 6 of 6 www.silikron.com attention: any and all silikron products described or contained herein do not have specifications that can handle applications that require extreme ly high levels of reliability, such as life - support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should a lways evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events t hat could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or tran smitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (incl uding circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringem ents of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delive ry specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service: sales@silik ron.com technical support: technical@silikron.com suzhou silikron semiconductor corp. 11a, 4 2 8 xinglong street, suzhou industrial park, p.r.china tel: (86 - 512) 62560688 fax: (86 - 512) 65160705 e - mail: sales@silikron.com
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